Mingzeng Peng

Associate Professor
office location:physical and chemical building 129
E-mail:mzpeng@ustb.edu.cn
Research Interests:Wide bandgap semiconductors; Two-dimensional & low-dimensional semiconductors; Semiconductor physics and optoelectronic devices
Resume

2016.11-present: Associate professor, Department of Applied Physics, University of Science and Technology Beijing (USTB), China; 2012.09-2016.10: Associate professor, Department of Piezo-phototronics, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, China; 2008.07-2012.08: Assistant professor, Department of Microwave Devices & Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, China; 2003.09-2008.06: PhD, State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, China;

Scientific research achievements

1. III-Nitrides micro/nano-array for pressure imaging and biomechanical analysis. 2. Piezotronic and piezo-phototronic effects in III-Nitrides and two-dimensional devices. 3. GaN HEMT high-frequency power devices and power electronics.

Enrollment plan

1-2 Master students per year

Representative papers

1. J. D. Cheng, C. T. Shen, Y. F. He, H. Y. Wei, S. J. Liu, P. Qiu, Y. M. Song, S. Wei, Z. X. Wang, X. H. Zheng*, M. Z. Peng*. Reaction mechanism transformation of LPCVD-grown MoS2 from isolated triangular grains to continuous films. Journal of Alloys and Compounds. 2021, 853, 157374. 2. S. J. Liu, G. Zhao, Y. F. He, Y. F. Li, H. Y. Wei, P. Qiu, X. Y. Wang, X. X. Wang, J. D. Cheng, M. Z. Peng*, F. Zaera, X. H. Zheng*. Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films. Applied Physics Letters. 2020, 116, 211601. 3. S. J. Liu, G. Zhao, Y. F. He, H. Y. Wei, Y. F. Li, P. Qiu, Y. M. Song, Y. L. An, X. Y. Wang, X. X. Wang, J. D. Cheng, M. Z. Peng*, X. H. Zheng*. Interfacial Tailoring for the Suppression of Impurities in GaN by In-situ Plasma Pretreatment via Atomic Layer Deposition. ACS Appl. Mater. Interfaces. 2019, 11, 35382–35388. 4. Y. L. An, Y. F. He, H. Y. Wei, S. J. Liu, M. L. Li, Y. M. Song, P. Qiu, A. Rehman, X. H. Zheng*, M. Z. Peng*. Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition. Results in Physics. 2019, 12, 804–809. 5. M. Z. Peng*, X. H. Zheng*, Y. F. He, H. Y. Wei, Y. L. An, Y. M. Song, P. Qiu. Magnetic-induced PL modulation of InGaN/GaN MQWs by a CoFeB ferromagnetic cap layer. Japanese Journal of Applied Physics. 2019, 58, SCCC24. 6. M. Z. Peng*, X. H. Zheng*, S. J. Liu, H. Y. Wei, Y. F. He, M. L. Li, Y. L. An, Y. M. Song, P. Qiu. A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating. Nanoscale, 2019, 11(8), 3710–3717. 7. M. Z. Peng*, X. H. Zheng, Z. G. Ma, H. Chen, S. J. Liu, Y. F. He, M. L. Li. Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation. Sensors and Actuators B: Chemical. 2018, 256, 367. 8. M. Z. Peng, Y. D. Liu, A. F. Yu, Y. Zhang, C. H. Liu, J. Y. Liu, W. Wu, K. Zhang, X. Q. Shi, J. Z. Kou, J. Y. Zhai*, and Z. L. Wang*. A Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio. ACS Nano. 2016, 10, 1572–1579. 9. M. Z. Peng, Z. Li. C. H. Liu, Q. Zheng, X. Q. Shi, M. Song, Y. Zhang, S. Y. Du, J. Y. Zhai*, and Z. L. Wang*. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging. ACS Nano. 2015, 9, 3143–3150. 10. M. Z. Peng, Y. Zhang, Y. D. Liu, M. Song, J. Y. Zhai*, Z. L. Wang*. Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth Terfenol-D structure. Advanced Materials. 2014, 26, 6767–6772.

Postgraduate training

  • School of Chemistry and Biological Engineering, USTB
  • 30 Xueyuan Road, Haidian District, Beijing,100083